b sot-723 plastic-encapsulate mosfets CJ3139K p-channel mosfet features z lead free product is acquired z surface mount package z p-channel switch with low r ds (on) z operated at low logic level gate drive application z load/power switching z interfacing, logic switching z battery management for ultra small portable electronics marking: kd maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current (note 1) i d -0.66 a pulsed drain current (t p =10 s) i dm -1.2 a power dissipation (note 1) p d 150 mw thermal resistance from junction to ambient (note 1) r ja 833 /w junction temperature t j 150 storage temperature t stg -55~+150 lead temperature for soldering purposes(1/8? from case for 10 s) t l 260 so t -723 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,dec,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -20 v zero gate voltage drain current i dss v ds =-20v,v gs = 0v -1 a gate-body leakage current i gss v gs =12v, v ds = 0v 20 a gate threshold voltage (note 2) v gs(th) v ds =v gs , i d =-250a -0.35 - 1.1 v v gs =-4.5v, i d =-1a 520 m ? v gs =-2.5v, i d =-0.8a 700 m ? drain-source on-resistance (note 2) r ds(on) v gs =-1.8v, i d =-0.5a 950 m ? forward transconductance (note 2) g fs v ds =-10v, i d =-0.54a 1.2 s diode forward voltage v sd i s =-0.5a, v gs = 0v -1.2 v dynamic characteristics (note 4) input capacitance c iss 113 170 pf output capacitance c oss 15 25 pf reverse transfer capacitance c rss v ds =-16v,v gs =0v,f =1mhz 9 15 pf switching characteristics (note 4) turn-on delay time (note 3) t d(on) 9 ns turn-on rise time (note 3) t r 5.8 ns turn-off delay time (note3) t d(off) 32.7 ns turn-off fall time (note 3) t f v gs =-4.5v,v ds =-10v, i d =-200ma ,r gen =10 ? 20.3 ns notes : 1. surface mounted on fr4 board using the minimum recommended pad size. 2. pulse test : pulse width=300s, duty cycle=2%. 3. switching characteristics are independ ent of operating junction temperatures. 4. guaranteed by design, not subject to producting. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,dec,2013
-0 -1 -2 -3 -4 -5 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -1 -2 -3 -4 -5 -6 0.0 0.4 0.8 1.2 1.6 2.0 -0.4 -0.8 -1.2 -1.6 -2.0 -1e-4 -1e-3 -0.01 -0.1 -1 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 -0.4 -0.5 -0.6 -0.7 -0.8 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 v gs =-10v v gs =-4.5v v gs =-3v v gs =-2.5v v gs =-1.5v output characteristics drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed i d =-0.8a ?? v gs r ds(on) on-resistance r ds(on) ( ? ) gate to source voltage v gs (v) v sd ?? i s source current i s (a) source to drain voltage v sd (v) -3 i d ?? r ds(on) v gs =-4.5v v gs =-1.8v v gs =-2.5v t a =25 pulsed drain current i d (a) on-resistance r ds(on) ( ? ) i d =-250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) CJ3139K v ds =-5.0v pulsed drain current i d (a) gate to source voltage v gs (v) t a =100 t a =25 transfer characteristics 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,dec,2013
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